Toshiba Semiconductor and Storage - 1SS352,H3F

KEY Part #: K6458215

1SS352,H3F Bei (USD) [3056256pcs Hisa]

  • 1 pcs$0.01277
  • 3,000 pcs$0.01271
  • 6,000 pcs$0.01146
  • 15,000 pcs$0.00997
  • 30,000 pcs$0.00897
  • 75,000 pcs$0.00797
  • 150,000 pcs$0.00664

Nambari ya Sehemu:
1SS352,H3F
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
DIODE GEN PURP 80V 100MA SC76-2. Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage 1SS352,H3F electronic components. 1SS352,H3F can be shipped within 24 hours after order. If you have any demands for 1SS352,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS352,H3F Sifa za Bidhaa

Nambari ya Sehemu : 1SS352,H3F
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : DIODE GEN PURP 80V 100MA SC76-2
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 80V
Sasa - Wastani Aliyerekebishwa (Io) : 100mA
Voltage - Mbele (Vf) (Max) @ Kama : 1.2V @ 100mA
Kasi : Small Signal =< 200mA (Io), Any Speed
Rudisha Wakati wa Kuokoa (trr) : 4ns
Sasa - Rejea kuvuja @ Vr : 500nA @ 80V
Uwezo @ Vr, F : 3pF @ 0V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-76A
Kifurushi cha Kifaa cha Mtoaji : SC-76-2
Joto la Kufanya kazi - Junction : 125°C (Max)

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