ISSI, Integrated Silicon Solution Inc - IS43TR16128B-125KBL-TR

KEY Part #: K939957

IS43TR16128B-125KBL-TR Bei (USD) [27552pcs Hisa]

  • 1 pcs$1.90861
  • 1,500 pcs$1.89911

Nambari ya Sehemu:
IS43TR16128B-125KBL-TR
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC DRAM 2G PARALLEL 96TWBGA. DRAM 2G, 1.5V, 1600MT/s 128Mx16 DDR3
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Marejeo ya Voltage, PMIC - PFC (Marekebisho ya Nguvu ya Nguvu), Maingiliano - vichungi - Inayotumika, Mantiki - Jenereta za Parity na Checkers, PMIC - Usajili wa Voltage - Mdhibiti wa Udhibiti w, PMIC - Madereva wa Lango, Maingiliano - vituo vya Ishara and Iliyoingizwa - Microcontroller - Maombi Maalum ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS43TR16128B-125KBL-TR electronic components. IS43TR16128B-125KBL-TR can be shipped within 24 hours after order. If you have any demands for IS43TR16128B-125KBL-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS43TR16128B-125KBL-TR Sifa za Bidhaa

Nambari ya Sehemu : IS43TR16128B-125KBL-TR
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC DRAM 2G PARALLEL 96TWBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR3
Saizi ya kumbukumbu : 2Gb (128M x 16)
Usafirishaji wa Saa : 800MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 20ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.425V ~ 1.575V
Joto la Kufanya kazi : 0°C ~ 95°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 96-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 96-TWBGA (9x13)

Habari mpya kabisa

Unaweza pia Kuvutiwa Na
  • MB85AS4MTPF-G-BCERE1

    Fujitsu Electronics America, Inc.

    IC RAM 4M SPI 5MHZ 8SOP.

  • AT28HC64B-12SU

    Microchip Technology

    IC EEPROM 64K PARALLEL 28SOIC. EEPROM 1M 5V SDP - 120NS IND TEMP

  • W25M512JVFIQ TR

    Winbond Electronics

    IC FLASH 512M SPI 104MHZ 16SOIC. Multichip Packages spiFlash, 512M-bit, 4Kb Uniform Sector

  • W9864G2JB-6I TR

    Winbond Electronics

    IC DRAM 64M PARALLEL 90TFBGA. DRAM 64M, SDR SDRAM, x32, 166MHz, Ind temp T&R

  • W632GG8MB-09

    Winbond Electronics

    IC DRAM 2G PARALLEL 1066MHZ. DRAM 2G DDR3 SDRAM, x8, 1066MHz

  • W29N02GWBIBA

    Winbond Electronics

    IC FLASH 2G PARALLEL 63VFBGA. NAND Flash 2G-bit NAND flash, 1.8V x 16bit