Vishay Siliconix - SIHH24N65EF-T1-GE3

KEY Part #: K6416842

SIHH24N65EF-T1-GE3 Bei (USD) [21082pcs Hisa]

  • 1 pcs$1.96466
  • 3,000 pcs$1.95488

Nambari ya Sehemu:
SIHH24N65EF-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CHAN 650V 23A POWERPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - JFETs, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa, Thyristors - DIAC, SIDAC, Moduli za Dereva za Nguvu and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIHH24N65EF-T1-GE3 electronic components. SIHH24N65EF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH24N65EF-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHH24N65EF-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIHH24N65EF-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CHAN 650V 23A POWERPAK
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 23A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 158 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2780pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 202W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 8 x 8
Kifurushi / Kesi : 8-PowerTDFN