Taiwan Semiconductor Corporation - ES3DV M6G

KEY Part #: K6458061

ES3DV M6G Bei (USD) [838004pcs Hisa]

  • 1 pcs$0.04414

Nambari ya Sehemu:
ES3DV M6G
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
DIODE GEN PURP 200V 3A DO214AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Kusudi Maalum and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
We specialize in Taiwan Semiconductor Corporation ES3DV M6G electronic components. ES3DV M6G can be shipped within 24 hours after order. If you have any demands for ES3DV M6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3DV M6G Sifa za Bidhaa

Nambari ya Sehemu : ES3DV M6G
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : DIODE GEN PURP 200V 3A DO214AB
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyerekebishwa (Io) : 3A
Voltage - Mbele (Vf) (Max) @ Kama : 900mV @ 3A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 20ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 200V
Uwezo @ Vr, F : 45pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AB, SMC
Kifurushi cha Kifaa cha Mtoaji : DO-214AB (SMC)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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