HN4A51JTE85LF Bei (USD) [719727pcs Hisa]
- 1 pcs$0.05165
- 3,000 pcs$0.05139
- Nambari ya Sehemu:
- HN4A51JTE85LF
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- TRANS 2PNP 120V 0.1A SMV.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Transistors - Ushirikiano uliopangwa and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage HN4A51JTE85LF electronic components. HN4A51JTE85LF can be shipped within 24 hours after order. If you have any demands for HN4A51JTE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN4A51JTE85LF Sifa za Bidhaa
Nambari ya Sehemu :
HN4A51JTE85LF
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS 2PNP 120V 0.1A SMV
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
2 PNP (Dual)
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
120V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 1mA, 10mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Nguvu - Max :
300mW
Mara kwa mara - Mpito :
100MHz
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SC-74A, SOT-753
Kifurushi cha Kifaa cha Mtoaji :
SMV
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