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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. W971GG8SB25I TR

Winbond Electronics - W971GG8SB25I TR

KEY Part #: K941708

W971GG8SB25I TR Bei (USD) [38649pcs Hisa]

  • 1 pcs$1.89987
  • 2,500 pcs$1.89041
Nambari ya Sehemu:
W971GG8SB25I TR
Mzalishaji:
Winbond Electronics
Maelezo ya kina:
IC DRAM 1G PARALLEL 60WBGA. DRAM 1G, DDR2-800, x8. Ind temp T&R
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Upataji wa data - ADC / DACs - Kusudi Maalum, Mantiki - Ishara za Ishara, Multiplexers, Decoders, Saa / Saa - Clocks halisi za saa, Saa / Saa - Maombi Maalum, PMIC - Viwango vya kudhibiti - Dereva wa DC DC Kub, Mantiki - Watafsiri, Shifters za Kiwango, PMIC - Onyesha Madereva and Maingiliano - Serializer, Deseriizer ...
Faida ya Ushindani:
We specialize in Winbond Electronics W971GG8SB25I TR electronic components. W971GG8SB25I TR can be shipped within 24 hours after order. If you have any demands for W971GG8SB25I TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

W971GG8SB25I TR Sifa za Bidhaa

Nambari ya Sehemu : W971GG8SB25I TR
Mzalishaji : Winbond Electronics
Maelezo : IC DRAM 1G PARALLEL 60WBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR2
Saizi ya kumbukumbu : 1Gb (128M x 8)
Usafirishaji wa Saa : 200MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 400ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.9V
Joto la Kufanya kazi : -40°C ~ 95°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 60-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 60-WBGA (8x12.5)

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