[7986pcs Hisa]
- Nambari ya Sehemu:
- PHX18NQ11T,127
- Mzalishaji:
- NXP USA Inc.
- Maelezo ya kina:
- MOSFET N-CH 110V 12.5A SOT186A.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Arrays, Moduli za Dereva za Nguvu, Transistors - Kusudi Maalum and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in NXP USA Inc. PHX18NQ11T,127 electronic components. PHX18NQ11T,127 can be shipped within 24 hours after order. If you have any demands for PHX18NQ11T,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHX18NQ11T,127 Sifa za Bidhaa
Nambari ya Sehemu :
PHX18NQ11T,127
Mzalishaji :
NXP USA Inc.
Maelezo :
MOSFET N-CH 110V 12.5A SOT186A
Mfululizo :
TrenchMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
110V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
90 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
635pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
31.2W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220F
Kifurushi / Kesi :
TO-220-3 Full Pack, Isolated Tab
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