ISSI, Integrated Silicon Solution Inc - IS43DR16320D-3DBI

KEY Part #: K936847

IS43DR16320D-3DBI Bei (USD) [15181pcs Hisa]

  • 1 pcs$3.61138
  • 209 pcs$3.59341

Nambari ya Sehemu:
IS43DR16320D-3DBI
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC DRAM 512M PARALLEL 84TWBGA. DRAM 512M, 1.8V, 333Mhz 32M x 16 DDR2
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Upataji wa Takwimu - Dijiti kwa Analog za Analog (, Iliyoingizwa - FPGAs (Ardhi inayopangwa kwa Mlango, Kumbukumbu - Watawala, PMIC - Wasimamizi, PMIC - Usimamizi wa Nguvu - Maalum, Maingiliano - Madereva, Wapokeaji, Waendeshaji kup, Maingiliano - Maalum and PMIC - Usimamizi wa Batri ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS43DR16320D-3DBI electronic components. IS43DR16320D-3DBI can be shipped within 24 hours after order. If you have any demands for IS43DR16320D-3DBI, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS43DR16320D-3DBI Sifa za Bidhaa

Nambari ya Sehemu : IS43DR16320D-3DBI
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC DRAM 512M PARALLEL 84TWBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR2
Saizi ya kumbukumbu : 512Mb (32M x 16)
Usafirishaji wa Saa : 333MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 450ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.9V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 84-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 84-TWBGA (8x12.5)

Habari mpya kabisa

Unaweza pia Kuvutiwa Na
  • 71V30S55TFG8

    IDT, Integrated Device Technology Inc

    IC SRAM 8K PARALLEL 64TQFP. SRAM 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM

  • AT28C256E-15SU

    Microchip Technology

    IC EEPROM 256K PARALLEL 28SOIC. EEPROM 256K HI-ENDURANCE SDP- 150NS IND TEMP

  • IS61LP6432A-133TQLI

    ISSI, Integrated Silicon Solution Inc

    IC SRAM 2M PARALLEL 100TQFP. SRAM 2Mb 64Kx32 133Mhz Sync SRAM 3.3v

  • 71V25761S183PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM

  • W29N04GZBIBA

    Winbond Electronics

    IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x8

  • W29N04GWBIBA

    Winbond Electronics

    IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x16