DMTH8012LPSW-13 Bei (USD) [222844pcs Hisa]
- 1 pcs$0.16598
- Nambari ya Sehemu:
- DMTH8012LPSW-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 80V 53.7A POWERDI506.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Arrays, Transistors - JFETs and Transistors - Bipolar (BJT) - Moja ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMTH8012LPSW-13 electronic components. DMTH8012LPSW-13 can be shipped within 24 hours after order. If you have any demands for DMTH8012LPSW-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH8012LPSW-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMTH8012LPSW-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 80V 53.7A POWERDI506
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
53.7A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
17 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1949pF @ 40V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.1W (Ta)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerDI5060-8
Kifurushi / Kesi :
8-PowerTDFN
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