DMN2013UFX-7 Bei (USD) [297714pcs Hisa]
- 1 pcs$0.12424
- Nambari ya Sehemu:
- DMN2013UFX-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2N-CH 20V 10A 6-DFN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Thyristors - SCR, Moduli za Dereva za Nguvu, Viwango - RF, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Arrays and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN2013UFX-7 electronic components. DMN2013UFX-7 can be shipped within 24 hours after order. If you have any demands for DMN2013UFX-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2013UFX-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMN2013UFX-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2N-CH 20V 10A 6-DFN
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual) Common Drain
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta)
Njia ya Kutumia (Max) @ Id, Vgs :
11.5 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
57.4nC @ 8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2607pF @ 10V
Nguvu - Max :
2.14W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
6-VFDFN Exposed Pad
Kifurushi cha Kifaa cha Mtoaji :
W-DFN5020-6
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