DMN62D1LFB-7B Bei (USD) [1359321pcs Hisa]
- 1 pcs$0.02721
- Nambari ya Sehemu:
- DMN62D1LFB-7B
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CHAN 41V 60V X1-DFN1006.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Moja and Thyristors - SCR ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN62D1LFB-7B electronic components. DMN62D1LFB-7B can be shipped within 24 hours after order. If you have any demands for DMN62D1LFB-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN62D1LFB-7B Sifa za Bidhaa
Nambari ya Sehemu :
DMN62D1LFB-7B
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CHAN 41V 60V X1-DFN1006
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
320mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.5V, 4V
Njia ya Kutumia (Max) @ Id, Vgs :
2 Ohm @ 100mA, 4V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
0.9nC @ 4.5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
64pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
500mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
X1-DFN1006-3
Kifurushi / Kesi :
3-UFDFN
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