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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. AS4C8M16D1-5BINTR

Alliance Memory, Inc. - AS4C8M16D1-5BINTR

KEY Part #: K942304

AS4C8M16D1-5BINTR Bei (USD) [45468pcs Hisa]

  • 1 pcs$0.95615
  • 2,500 pcs$0.90163
Nambari ya Sehemu:
AS4C8M16D1-5BINTR
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 128M PARALLEL 60TFBGA. DRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Kusudi Maalum la Sauti, Maingiliano - Madereva, Wapokeaji, Waendeshaji kup, Maelewano - Sensor, Kugusa uwezo, Maingiliano - Modemu - IC na Moduli, Linear - Amplifiers - Kusudi Maalum, Saa / Saa - Maombi Maalum, PMIC - Vidhibiti vya Voltage - Linear + Kubadilish and Maingiliano - Telecom ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C8M16D1-5BINTR electronic components. AS4C8M16D1-5BINTR can be shipped within 24 hours after order. If you have any demands for AS4C8M16D1-5BINTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C8M16D1-5BINTR Sifa za Bidhaa

Nambari ya Sehemu : AS4C8M16D1-5BINTR
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 128M PARALLEL 60TFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR
Saizi ya kumbukumbu : 128Mb (8M x 16)
Usafirishaji wa Saa : 200MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 700ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 2.3V ~ 2.7V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 60-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 60-TFBGA (8x13)

Habari mpya kabisa

Alliance Memory MT41x DDR3 SDRAMs
Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory Low Power CMOS SRAM
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