Nambari ya Sehemu :
1N1200A
Mzalishaji :
GeneSiC Semiconductor
Maelezo :
DIODE GEN PURP 100V 12A DO4
Voltage - DC Reverse (Vr) (Max) :
100V
Sasa - Wastani Aliyerekebishwa (Io) :
12A
Voltage - Mbele (Vf) (Max) @ Kama :
1.1V @ 12A
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
-
Sasa - Rejea kuvuja @ Vr :
10µA @ 50V
Aina ya Kuinua :
Chassis, Stud Mount
Kifurushi / Kesi :
DO-203AA, DO-4, Stud
Kifurushi cha Kifaa cha Mtoaji :
DO-4
Joto la Kufanya kazi - Junction :
-65°C ~ 200°C