Nambari ya Sehemu :
IPB160N04S4LH1ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH TO263-7
Mfululizo :
Automotive, AEC-Q101, OptiMOS™
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
160A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 110µA
Malango ya Lango (Qg) (Max) @ Vgs :
190nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
14950pF @ 25V
Kuondoa Nguvu (Max) :
167W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO263-7-3
Kifurushi / Kesi :
TO-263-7, D²Pak (6 Leads + Tab)