FZ800R12KS4B2NOSA1 Bei (USD) [85pcs Hisa]
- 1 pcs$419.92099
- Nambari ya Sehemu:
- FZ800R12KS4B2NOSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MODULE IGBT A-IHM130-1.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moduli, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies FZ800R12KS4B2NOSA1 electronic components. FZ800R12KS4B2NOSA1 can be shipped within 24 hours after order. If you have any demands for FZ800R12KS4B2NOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FZ800R12KS4B2NOSA1 Sifa za Bidhaa
Nambari ya Sehemu :
FZ800R12KS4B2NOSA1
Mzalishaji :
Infineon Technologies
Maelezo :
MODULE IGBT A-IHM130-1
Mfululizo :
-
Hali ya Sehemu :
Not For New Designs
Aina ya IGBT :
-
Usanidi :
Single
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
1200A
Nguvu - Max :
7600W
Vce (on) (Max) @ Vge, Ic :
3.7V @ 15V, 800A
Sasa - Ushuru Mtoaji :
5mA
Uingilivu Ufungaji (Wakuu) @ Vce :
52nF @ 25V
Uingizaji :
Standard
Mtaalam wa NTC :
No
Joto la Kufanya kazi :
-40°C ~ 125°C
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Module
Kifurushi cha Kifaa cha Mtoaji :
Module
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