DMG7N65SJ3 Bei (USD) [97039pcs Hisa]
- 1 pcs$0.40294
- 75 pcs$0.37835
- Nambari ya Sehemu:
- DMG7N65SJ3
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET BVDSS 501V 650V TO251.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - Arrays, Thyristors - TRIAC, Transistors - Ushirikiano uliopangwa, Thyristors - SCR, Transistors - JFETs and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMG7N65SJ3 electronic components. DMG7N65SJ3 can be shipped within 24 hours after order. If you have any demands for DMG7N65SJ3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG7N65SJ3 Sifa za Bidhaa
Nambari ya Sehemu :
DMG7N65SJ3
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET BVDSS 501V 650V TO251
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.4 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
886pF @ 50V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
125W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-251
Kifurushi / Kesi :
TO-251-3, IPak, Short Leads
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