Nambari ya Sehemu :
VS-2EFH01-M3/I
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 100V 2A DO219AB
Voltage - DC Reverse (Vr) (Max) :
100V
Sasa - Wastani Aliyerekebishwa (Io) :
2A
Voltage - Mbele (Vf) (Max) @ Kama :
950mV @ 2A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
24ns
Sasa - Rejea kuvuja @ Vr :
2µA @ 100V
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
DO-219AB
Kifurushi cha Kifaa cha Mtoaji :
DO-219AB (SMF)
Joto la Kufanya kazi - Junction :
-65°C ~ 175°C