Micron Technology Inc. - MT47H32M16NF-25E AAT:H

KEY Part #: K936916

MT47H32M16NF-25E AAT:H Bei (USD) [15404pcs Hisa]

  • 1 pcs$2.98960
  • 1,368 pcs$2.97472

Nambari ya Sehemu:
MT47H32M16NF-25E AAT:H
Mzalishaji:
Micron Technology Inc.
Maelezo ya kina:
IC DRAM 512M PARALLEL 84FBGA. DRAM DDR2 512M 32MX16 FBGA
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Linear - Analog Multipliers, Dialers, Upataji wa data - Kidhibiti cha Skrini ya Kugusa, Mantiki - Jenereta za Parity na Checkers, PMIC - Usajili wa Voltage - DC DC Kubadilisha Regu, PMIC - PFC (Marekebisho ya Nguvu ya Nguvu), PMIC - Uuzaji wa Nishati, Maelewano - Sensor, Kugusa uwezo and PMIC - Udhibiti wa Mabadiliko ya Moto ...
Faida ya Ushindani:
We specialize in Micron Technology Inc. MT47H32M16NF-25E AAT:H electronic components. MT47H32M16NF-25E AAT:H can be shipped within 24 hours after order. If you have any demands for MT47H32M16NF-25E AAT:H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MT47H32M16NF-25E AAT:H Sifa za Bidhaa

Nambari ya Sehemu : MT47H32M16NF-25E AAT:H
Mzalishaji : Micron Technology Inc.
Maelezo : IC DRAM 512M PARALLEL 84FBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR2
Saizi ya kumbukumbu : 512Mb (32M x 16)
Usafirishaji wa Saa : 400MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 400ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.9V
Joto la Kufanya kazi : -40°C ~ 105°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 84-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 84-FBGA (8x12.5)

Unaweza pia Kuvutiwa Na
  • 71V30S55TFG8

    IDT, Integrated Device Technology Inc

    IC SRAM 8K PARALLEL 64TQFP. SRAM 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM

  • AT28HC256E-12SU-T

    Microchip Technology

    IC EEPROM 256K PARALLEL 28SOIC. EEPROM 120NS, SOIC, IND TEMP, GREEN

  • 71V25761S183PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM

  • W29N04GZBIBA

    Winbond Electronics

    IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x8

  • W29N04GWBIBA

    Winbond Electronics

    IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x16

  • EDB1332BDBH-1DAAT-F-D

    Micron Technology Inc.

    IC DRAM 1G PARALLEL 134VFBGA. DRAM LPDDR2 1G 32MX32 FBGA