Toshiba Semiconductor and Storage - BAS316,H3F

KEY Part #: K6458608

BAS316,H3F Bei (USD) [3056256pcs Hisa]

  • 1 pcs$0.01210

Nambari ya Sehemu:
BAS316,H3F
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
DIODE GEN PURP 100V 250MA USC. Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Thyristors - SCRs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Viwango - Zener - Arrays and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage BAS316,H3F electronic components. BAS316,H3F can be shipped within 24 hours after order. If you have any demands for BAS316,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS316,H3F Sifa za Bidhaa

Nambari ya Sehemu : BAS316,H3F
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : DIODE GEN PURP 100V 250MA USC
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 250mA
Voltage - Mbele (Vf) (Max) @ Kama : 1.25V @ 150mA
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 3ns
Sasa - Rejea kuvuja @ Vr : 200nA @ 80V
Uwezo @ Vr, F : 0.35pF @ 0V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-76, SOD-323
Kifurushi cha Kifaa cha Mtoaji : USC
Joto la Kufanya kazi - Junction : 150°C (Max)

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