ON Semiconductor - NGTB30N120FL2WG

KEY Part #: K6422501

NGTB30N120FL2WG Bei (USD) [9937pcs Hisa]

  • 1 pcs$4.14699
  • 90 pcs$3.39873

Nambari ya Sehemu:
NGTB30N120FL2WG
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
IGBT 1200V 60A 452W TO247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTB30N120FL2WG Sifa za Bidhaa

Nambari ya Sehemu : NGTB30N120FL2WG
Mzalishaji : ON Semiconductor
Maelezo : IGBT 1200V 60A 452W TO247
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : Trench Field Stop
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 60A
Sasa - Mtoza Ushuru (Icm) : 120A
Vce (on) (Max) @ Vge, Ic : 2.3V @ 15V, 30A
Nguvu - Max : 452W
Kubadilisha Nishati : 2.6mJ (on), 700µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 220nC
Td (on / off) @ 25 ° C : 98ns/210ns
Hali ya Uchunguzi : 600V, 30A, 10 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : 240ns
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-247-3
Kifurushi cha Kifaa cha Mtoaji : TO-247