TPN4R303NL,L1Q Bei (USD) [247410pcs Hisa]
- 1 pcs$0.15701
- 5,000 pcs$0.15623
- Nambari ya Sehemu:
- TPN4R303NL,L1Q
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N-CH 30V 63A 8TSON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCRs - Moduli and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TPN4R303NL,L1Q electronic components. TPN4R303NL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R303NL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN4R303NL,L1Q Sifa za Bidhaa
Nambari ya Sehemu :
TPN4R303NL,L1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 30V 63A 8TSON
Mfululizo :
U-MOSVIII-H
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
40A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
4.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
14.8nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1400pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
700mW (Ta), 34W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-TSON Advance (3.3x3.3)
Kifurushi / Kesi :
8-PowerVDFN
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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