Nambari ya Sehemu :
TPN4R303NL,L1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 30V 63A 8TSON
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
40A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
4.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
14.8nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1400pF @ 15V
Kuondoa Nguvu (Max) :
700mW (Ta), 34W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-TSON Advance (3.3x3.3)
Kifurushi / Kesi :
8-PowerVDFN