Toshiba Semiconductor and Storage - TPN4R303NL,L1Q

KEY Part #: K6416406

TPN4R303NL,L1Q Bei (USD) [247410pcs Hisa]

  • 1 pcs$0.15701
  • 5,000 pcs$0.15623

Nambari ya Sehemu:
TPN4R303NL,L1Q
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
MOSFET N-CH 30V 63A 8TSON.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Moja, Thyristors - SCRs - Moduli, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Zener - Arrays and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage TPN4R303NL,L1Q electronic components. TPN4R303NL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R303NL,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPN4R303NL,L1Q Sifa za Bidhaa

Nambari ya Sehemu : TPN4R303NL,L1Q
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : MOSFET N-CH 30V 63A 8TSON
Mfululizo : U-MOSVIII-H
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 40A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 4.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.3V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs : 14.8nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1400pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 700mW (Ta), 34W (Tc)
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-TSON Advance (3.3x3.3)
Kifurushi / Kesi : 8-PowerVDFN