Infineon Technologies - FP150R07N3E4B11BOSA1

KEY Part #: K6533330

FP150R07N3E4B11BOSA1 Bei (USD) [653pcs Hisa]

  • 1 pcs$71.10407

Nambari ya Sehemu:
FP150R07N3E4B11BOSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT MODULE VCES 650V 150A.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moduli and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in Infineon Technologies FP150R07N3E4B11BOSA1 electronic components. FP150R07N3E4B11BOSA1 can be shipped within 24 hours after order. If you have any demands for FP150R07N3E4B11BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FP150R07N3E4B11BOSA1 Sifa za Bidhaa

Nambari ya Sehemu : FP150R07N3E4B11BOSA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT MODULE VCES 650V 150A
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : Trench Field Stop
Usanidi : Three Phase Inverter
Voltage - Kukusanya Emitter Kuvunja (Max) : 650V
Sasa - Mtoza (Ic) (Max) : 150A
Nguvu - Max : 430W
Vce (on) (Max) @ Vge, Ic : 1.95V @ 15V, 150A
Sasa - Ushuru Mtoaji : 1mA
Uingilivu Ufungaji (Wakuu) @ Vce : 9.3nF @ 25V
Uingizaji : Standard
Mtaalam wa NTC : Yes
Joto la Kufanya kazi : -40°C ~ 150°C
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : Module

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