NXP USA Inc. - PHT6N06T,135

KEY Part #: K6414229

[12826pcs Hisa]


    Nambari ya Sehemu:
    PHT6N06T,135
    Mzalishaji:
    NXP USA Inc.
    Maelezo ya kina:
    MOSFET N-CH 55V 5.5A SOT223.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
    Faida ya Ushindani:
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    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PHT6N06T,135 Sifa za Bidhaa

    Nambari ya Sehemu : PHT6N06T,135
    Mzalishaji : NXP USA Inc.
    Maelezo : MOSFET N-CH 55V 5.5A SOT223
    Mfululizo : TrenchMOS™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 55V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 5.5A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 150 mOhm @ 5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 5.6nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 175pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 8.3W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : SOT-223
    Kifurushi / Kesi : TO-261-4, TO-261AA