Nambari ya Sehemu :
ES3B V7G
Mzalishaji :
Taiwan Semiconductor Corporation
Maelezo :
DIODE GEN PURP 100V 3A DO214AB
Voltage - DC Reverse (Vr) (Max) :
100V
Sasa - Wastani Aliyerekebishwa (Io) :
3A
Voltage - Mbele (Vf) (Max) @ Kama :
-
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
35ns
Sasa - Rejea kuvuja @ Vr :
10µA @ 100V
Uwezo @ Vr, F :
45pF @ 4V, 1MHz
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
DO-214AB, SMC
Kifurushi cha Kifaa cha Mtoaji :
DO-214AB (SMC)
Joto la Kufanya kazi - Junction :
-55°C ~ 150°C