[156pcs Hisa]
- Nambari ya Sehemu:
- IPP26CNE8N G
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 85V 35A TO-220.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moduli, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPP26CNE8N G electronic components. IPP26CNE8N G can be shipped within 24 hours after order. If you have any demands for IPP26CNE8N G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP26CNE8N G Sifa za Bidhaa
Nambari ya Sehemu :
IPP26CNE8N G
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 85V 35A TO-220
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
85V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
35A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
26 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
4V @ 39µA
Malango ya Lango (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2070pF @ 40V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
71W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO220-3
Kifurushi / Kesi :
TO-220-3
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