VS-GB100TH120N Bei (USD) [261pcs Hisa]
- 1 pcs$177.68022
- 12 pcs$163.71967
- Nambari ya Sehemu:
- VS-GB100TH120N
- Mzalishaji:
- Vishay Semiconductor Diodes Division
- Maelezo ya kina:
- IGBT 1200V 200A 833W INT-A-PAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Transistors - Ushirikiano uliopangwa, Thyristors - DIAC, SIDAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120N electronic components. VS-GB100TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB100TH120N Sifa za Bidhaa
Nambari ya Sehemu :
VS-GB100TH120N
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
IGBT 1200V 200A 833W INT-A-PAK
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya IGBT :
-
Usanidi :
Half Bridge
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
200A
Nguvu - Max :
833W
Vce (on) (Max) @ Vge, Ic :
2.35V @ 15V, 100A
Sasa - Ushuru Mtoaji :
5mA
Uingilivu Ufungaji (Wakuu) @ Vce :
8.58nF @ 25V
Uingizaji :
Standard
Mtaalam wa NTC :
No
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Double INT-A-PAK (3 + 4)
Kifurushi cha Kifaa cha Mtoaji :
Double INT-A-PAK
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
VS-ETL015Y120H
Vishay Semiconductor Diodes Division
IGBT 1200V 22A 89W EMIPAK-2B. Rectifiers 15A Dbl Interleaved Boost Converter
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