Vishay Semiconductor Diodes Division - ES2GHE3_A/H

KEY Part #: K6451064

ES2GHE3_A/H Bei (USD) [326142pcs Hisa]

  • 1 pcs$0.11341
  • 3,000 pcs$0.07596

Nambari ya Sehemu:
ES2GHE3_A/H
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 300V 2A DO214AA. Rectifiers 2A,400V,35ns, SMB F.EFF.SM DIODE
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Viwango - Rectifiers - Arrays, Viwango - RF, Transistors - IGBTs - Moduli, Viwango - Bridge Rectifiers, Thyristors - TRIAC, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division ES2GHE3_A/H electronic components. ES2GHE3_A/H can be shipped within 24 hours after order. If you have any demands for ES2GHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES2GHE3_A/H Sifa za Bidhaa

Nambari ya Sehemu : ES2GHE3_A/H
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 300V 2A DO214AA
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 300V
Sasa - Wastani Aliyerekebishwa (Io) : 2A
Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 2A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 35ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 50V
Uwezo @ Vr, F : 15pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AA, SMB
Kifurushi cha Kifaa cha Mtoaji : DO-214AA (SMB)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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