HN4B01JE(TE85L,F) Bei (USD) [1309823pcs Hisa]
- 1 pcs$0.02824
- Nambari ya Sehemu:
- HN4B01JE(TE85L,F)
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- TRANS NPN/PNP 50V 0.15A ESV PLN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Thyristors - TRIAC, Transistors - IGBTs - Moduli and Thyristors - SCR ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage HN4B01JE(TE85L,F) electronic components. HN4B01JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN4B01JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN4B01JE(TE85L,F) Sifa za Bidhaa
Nambari ya Sehemu :
HN4B01JE(TE85L,F)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS NPN/PNP 50V 0.15A ESV PLN
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
NPN, PNP (Emitter Coupled)
Sasa - Mtoza (Ic) (Max) :
150mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Vce Saturdayation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
120 @ 10MA, 100MA
Nguvu - Max :
100mW
Mara kwa mara - Mpito :
80MHz
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-553
Kifurushi cha Kifaa cha Mtoaji :
ESV
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