ZXMN2F30FHQTA Bei (USD) [663036pcs Hisa]
- 1 pcs$0.05579
- 3,000 pcs$0.05025
- Nambari ya Sehemu:
- ZXMN2F30FHQTA
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 20V 4.9A SOT23-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Viwango - RF, Transistors - IGBTs - Moduli, Viwango - Zener - Moja, Transistors - IGBTs - Moja and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated ZXMN2F30FHQTA electronic components. ZXMN2F30FHQTA can be shipped within 24 hours after order. If you have any demands for ZXMN2F30FHQTA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN2F30FHQTA Sifa za Bidhaa
Nambari ya Sehemu :
ZXMN2F30FHQTA
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 20V 4.9A SOT23-3
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.9A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
45 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
4.8nC @ 10V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
452pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.4W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SOT-23-3
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
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