SUD35N10-26P-T4GE3 Bei (USD) [84051pcs Hisa]
- 1 pcs$0.46521
- 2,500 pcs$0.43586
- Nambari ya Sehemu:
- SUD35N10-26P-T4GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 100V 35A TO252.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SUD35N10-26P-T4GE3 electronic components. SUD35N10-26P-T4GE3 can be shipped within 24 hours after order. If you have any demands for SUD35N10-26P-T4GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUD35N10-26P-T4GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SUD35N10-26P-T4GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 100V 35A TO252
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
35A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
7V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
26 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4.4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
47nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2000pF @ 12V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
8.3W (Ta), 83W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-252, (D-Pak)
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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