Vishay Siliconix - SI1050X-T1-GE3

KEY Part #: K6418445

SI1050X-T1-GE3 Bei (USD) [498647pcs Hisa]

  • 1 pcs$0.07455
  • 3,000 pcs$0.07418

Nambari ya Sehemu:
SI1050X-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 8V 1.34A SC-89-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Arrays, Thyristors - SCR, Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moja, Viwango - RF and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI1050X-T1-GE3 electronic components. SI1050X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1050X-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1050X-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI1050X-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 8V 1.34A SC-89-6
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 8V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.34A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 86 mOhm @ 1.34A, 4.5V
Vgs (th) (Max) @ Id : 900mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 11.6nC @ 5V
Vgs (Max) : ±5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 585pF @ 4V
Makala ya FET : -
Kuondoa Nguvu (Max) : 236mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SC-89-6
Kifurushi / Kesi : SOT-563, SOT-666

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