Taiwan Semiconductor Corporation - S4D M6G

KEY Part #: K6457823

S4D M6G Bei (USD) [696049pcs Hisa]

  • 1 pcs$0.05314

Nambari ya Sehemu:
S4D M6G
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
DIODE GEN PURP 200V 4A DO214AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Arrays, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - RF, Viwango - Zener - Moja, Transistors - JFETs and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Taiwan Semiconductor Corporation S4D M6G electronic components. S4D M6G can be shipped within 24 hours after order. If you have any demands for S4D M6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S4D M6G Sifa za Bidhaa

Nambari ya Sehemu : S4D M6G
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : DIODE GEN PURP 200V 4A DO214AB
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyerekebishwa (Io) : 4A
Voltage - Mbele (Vf) (Max) @ Kama : 1.15V @ 4A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 1.5µs
Sasa - Rejea kuvuja @ Vr : 100µA @ 200V
Uwezo @ Vr, F : 60pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AB, SMC
Kifurushi cha Kifaa cha Mtoaji : DO-214AB (SMC)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

Unaweza pia Kuvutiwa Na
  • GL41YHE3/97

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.6KV 1A DO213AB. Rectifiers 1 Amp 1600 Volt 30 Amp IFSM

  • RGL34G-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Diodes - General Purpose, Power, Switching 400 Volt 0.5A 150ns 10 Amp IFSM

  • BYM07-300-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 500MA DO213. Rectifiers 300 Volt 0.5A 50ns Glass Passivated

  • BYM07-50-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 50 Volt 0.5A 50ns Glass Passivated

  • EGL34C-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 500MA DO213. Rectifiers 0.5Amp 150 Volt 50ns

  • EGL34F-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 500MA DO213. Rectifiers 0.5Amp 300 Volt 50ns