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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. AS4C16M16D1-5BIN

Alliance Memory, Inc. - AS4C16M16D1-5BIN

KEY Part #: K940323

AS4C16M16D1-5BIN Bei (USD) [29325pcs Hisa]

  • 1 pcs$1.57037
  • 240 pcs$1.56256
Nambari ya Sehemu:
AS4C16M16D1-5BIN
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 256M PARALLEL 60TFBGA. DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - Watawala, PMIC - Usajili wa Voltage - DC DC Kubadilisha Regu, PMIC - Wasimamizi, PMIC - Usimamizi wa mafuta, Linear - Amplifiers - Amps za Video na Moduli, Maingiliano - Moduli, Kumbukumbu - Watawala and PMIC - V / F na waongofu wa F / V ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C16M16D1-5BIN electronic components. AS4C16M16D1-5BIN can be shipped within 24 hours after order. If you have any demands for AS4C16M16D1-5BIN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C16M16D1-5BIN Sifa za Bidhaa

Nambari ya Sehemu : AS4C16M16D1-5BIN
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 256M PARALLEL 60TFBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR
Saizi ya kumbukumbu : 256Mb (16M x 16)
Usafirishaji wa Saa : 200MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 700ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 2.3V ~ 2.7V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 60-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 60-TFBGA (8x13)

Habari mpya kabisa

Alliance Memory Low Power CMOS SRAM
Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory MT41x DDR3 SDRAMs
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