ON Semiconductor - FGA25N120ANTDTU-F109

KEY Part #: K6422700

FGA25N120ANTDTU-F109 Bei (USD) [29315pcs Hisa]

  • 1 pcs$1.40583

Nambari ya Sehemu:
FGA25N120ANTDTU-F109
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
IGBT 1200V 50A 312W TO3P.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Thyristors - SCRs - Moduli, Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in ON Semiconductor FGA25N120ANTDTU-F109 electronic components. FGA25N120ANTDTU-F109 can be shipped within 24 hours after order. If you have any demands for FGA25N120ANTDTU-F109, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGA25N120ANTDTU-F109 Sifa za Bidhaa

Nambari ya Sehemu : FGA25N120ANTDTU-F109
Mzalishaji : ON Semiconductor
Maelezo : IGBT 1200V 50A 312W TO3P
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : NPT and Trench
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 50A
Sasa - Mtoza Ushuru (Icm) : 90A
Vce (on) (Max) @ Vge, Ic : 2.65V @ 15V, 50A
Nguvu - Max : 312W
Kubadilisha Nishati : 4.1mJ (on), 960µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 200nC
Td (on / off) @ 25 ° C : 50ns/190ns
Hali ya Uchunguzi : 600V, 25A, 10 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : 350ns
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-3P-3, SC-65-3
Kifurushi cha Kifaa cha Mtoaji : TO-3P