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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. W987D2HBJX7E TR

Winbond Electronics - W987D2HBJX7E TR

KEY Part #: K942478

W987D2HBJX7E TR Bei (USD) [47612pcs Hisa]

  • 1 pcs$1.02726
  • 2,500 pcs$1.02215
Nambari ya Sehemu:
W987D2HBJX7E TR
Mzalishaji:
Winbond Electronics
Maelezo ya kina:
IC DRAM 128M PARALLEL 90VFBGA. DRAM 128M mSDR, x32, 133MHz, 65nm T&R
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - Telecom, PMIC - Usimamizi wa Batri, Linear - Amplifiers - Kusudi Maalum, Mantiki - Multivibrators, PMIC - Uuzaji wa Nishati, PMIC - Usimamizi wa mafuta, ICs Maalum and PMIC - Madereva wa Lango ...
Faida ya Ushindani:
We specialize in Winbond Electronics W987D2HBJX7E TR electronic components. W987D2HBJX7E TR can be shipped within 24 hours after order. If you have any demands for W987D2HBJX7E TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

W987D2HBJX7E TR Sifa za Bidhaa

Nambari ya Sehemu : W987D2HBJX7E TR
Mzalishaji : Winbond Electronics
Maelezo : IC DRAM 128M PARALLEL 90VFBGA
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - Mobile LPSDR
Saizi ya kumbukumbu : 128Mb (4M x 32)
Usafirishaji wa Saa : 133MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 5.4ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.95V
Joto la Kufanya kazi : -25°C ~ 85°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 90-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 90-VFBGA (8x13)

Habari mpya kabisa

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