BCR555E6327HTSA1 Bei (USD) [1461272pcs Hisa]
- 1 pcs$0.02544
- 3,000 pcs$0.02531
- 6,000 pcs$0.02201
- 15,000 pcs$0.01871
- 30,000 pcs$0.01761
- 75,000 pcs$0.01651
- Nambari ya Sehemu:
- BCR555E6327HTSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- TRANS PREBIAS PNP 0.33W SOT23-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Viwango - Zener - Moja, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BCR555E6327HTSA1 electronic components. BCR555E6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BCR555E6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BCR555E6327HTSA1 Sifa za Bidhaa
Nambari ya Sehemu :
BCR555E6327HTSA1
Mzalishaji :
Infineon Technologies
Maelezo :
TRANS PREBIAS PNP 0.33W SOT23-3
Mfululizo :
-
Hali ya Sehemu :
Last Time Buy
Aina ya Transistor :
PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) :
500mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
2.2 kOhms
Upinzani - Base ya Emitter (R2) :
10 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
70 @ 50mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 2.5mA, 50mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
Mara kwa mara - Mpito :
150MHz
Nguvu - Max :
330mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji :
SOT-23-3
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