Nambari ya Sehemu :
C3M0065100J-TR
Mzalishaji :
Cree/Wolfspeed
Maelezo :
1000V 65 MOHM G3 SIC MOSFET
Teknolojia :
SiC (Silicon Carbide Junction Transistor)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
35A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
15V
Njia ya Kutumia (Max) @ Id, Vgs :
78 mOhm @ 20A, 15V
Vgs (th) (Max) @ Id :
3.5V @ 5mA
Malango ya Lango (Qg) (Max) @ Vgs :
35nC @ 15V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
660pF @ 600V
Kuondoa Nguvu (Max) :
113.5W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-263-7
Kifurushi / Kesi :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA