IXYS - IXFA3N120

KEY Part #: K6394869

IXFA3N120 Bei (USD) [17085pcs Hisa]

  • 1 pcs$3.23474
  • 10 pcs$2.91215
  • 100 pcs$2.39454
  • 500 pcs$2.00623
  • 1,000 pcs$1.74735

Nambari ya Sehemu:
IXFA3N120
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 1200V 3A TO-263.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - Kusudi Maalum, Viwango - Rectifiers - Moja, Transistors - IGBTs - Moduli, Viwango - Zener - Moja, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moja and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
We specialize in IXYS IXFA3N120 electronic components. IXFA3N120 can be shipped within 24 hours after order. If you have any demands for IXFA3N120, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA3N120 Sifa za Bidhaa

Nambari ya Sehemu : IXFA3N120
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 1200V 3A TO-263
Mfululizo : HiPerFET™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 4.5 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 1.5mA
Malango ya Lango (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1050pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 200W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-263 (IXFA)
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB