Vishay Siliconix - SI7117DN-T1-E3

KEY Part #: K6417545

SI7117DN-T1-E3 Bei (USD) [171658pcs Hisa]

  • 1 pcs$0.49754
  • 10 pcs$0.43900
  • 100 pcs$0.32826
  • 500 pcs$0.25457
  • 1,000 pcs$0.20097

Nambari ya Sehemu:
SI7117DN-T1-E3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CH 150V 2.17A 1212-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - SCR, Viwango - Rectifiers - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Moja and Transistors - Bipolar (BJT) - Kufika ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI7117DN-T1-E3 electronic components. SI7117DN-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7117DN-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7117DN-T1-E3 Sifa za Bidhaa

Nambari ya Sehemu : SI7117DN-T1-E3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CH 150V 2.17A 1212-8
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 150V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.17A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.2 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 510pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.2W (Ta), 12.5W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 1212-8
Kifurushi / Kesi : PowerPAK® 1212-8