Nambari ya Sehemu :
IR25600PBF
Mzalishaji :
Infineon Technologies
Maelezo :
IC DUAL MOSFET IGBT 8-DIP
Usanidi ulioendeshwa :
Low-Side
Aina ya Channel :
Independent
Aina ya Lango :
IGBT, N-Channel MOSFET
Voltage - Ugavi :
6V ~ 20V
Logic Voltage - VIL, VIH :
0.8V, 2.7V
Pato la Sasa (Pato, Mchanganyiko) :
2.3A, 3.3A
Aina ya Kuingiza :
Non-Inverting
High Side Voltage - Max (Bootstrap) :
-
Wakati wa kupanda / Kuanguka (Aina) :
15ns, 10ns
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
8-DIP (0.300", 7.62mm)
Kifurushi cha Kifaa cha Mtoaji :
8-PDIP