Vishay Semiconductor Diodes Division - VB20120C-E3/4W

KEY Part #: K6471889

VB20120C-E3/4W Bei (USD) [108070pcs Hisa]

  • 1 pcs$0.34225
  • 1,000 pcs$0.31017

Nambari ya Sehemu:
VB20120C-E3/4W
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE ARRAY SCHOTTKY 120V TO263.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Moja, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Arrays, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division VB20120C-E3/4W electronic components. VB20120C-E3/4W can be shipped within 24 hours after order. If you have any demands for VB20120C-E3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VB20120C-E3/4W Sifa za Bidhaa

Nambari ya Sehemu : VB20120C-E3/4W
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE ARRAY SCHOTTKY 120V TO263
Mfululizo : TMBS®
Hali ya Sehemu : Active
Usanidi wa Diode : 1 Pair Common Cathode
Aina ya Diode : Schottky
Voltage - DC Reverse (Vr) (Max) : 120V
Sasa - Wastani Aliyesafishwa (Io) (kwa Diode) : 10A
Voltage - Mbele (Vf) (Max) @ Kama : 900mV @ 10A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : -
Sasa - Rejea kuvuja @ Vr : 700µA @ 120V
Joto la Kufanya kazi - Junction : -40°C ~ 150°C
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : TO-263AB

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