ON Semiconductor - FGA25N120ANTDTU

KEY Part #: K6421756

FGA25N120ANTDTU Bei (USD) [22160pcs Hisa]

  • 1 pcs$2.39741
  • 10 pcs$2.15326
  • 100 pcs$1.76408
  • 500 pcs$1.50171
  • 1,000 pcs$1.26651

Nambari ya Sehemu:
FGA25N120ANTDTU
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
IGBT 1200V 50A 312W TO3P.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Moduli za Dereva za Nguvu and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGA25N120ANTDTU Sifa za Bidhaa

Nambari ya Sehemu : FGA25N120ANTDTU
Mzalishaji : ON Semiconductor
Maelezo : IGBT 1200V 50A 312W TO3P
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : NPT and Trench
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 50A
Sasa - Mtoza Ushuru (Icm) : 90A
Vce (on) (Max) @ Vge, Ic : 2.65V @ 15V, 50A
Nguvu - Max : 312W
Kubadilisha Nishati : 4.1mJ (on), 960µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 200nC
Td (on / off) @ 25 ° C : 50ns/190ns
Hali ya Uchunguzi : 600V, 25A, 10 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : 350ns
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-3P-3, SC-65-3
Kifurushi cha Kifaa cha Mtoaji : TO-3P