[1270pcs Hisa]
- Nambari ya Sehemu:
- IRF6709S2TR1PBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 25V 12A DIRECTFET-S1.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moduli, Thyristors - SCR, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Transistors - Kusudi Maalum, Thyristors - SCRs - Moduli and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF6709S2TR1PBF electronic components. IRF6709S2TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6709S2TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6709S2TR1PBF Sifa za Bidhaa
Nambari ya Sehemu :
IRF6709S2TR1PBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 25V 12A DIRECTFET-S1
Mfululizo :
HEXFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12A (Ta), 39A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
7.8 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1010pF @ 13V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.8W (Ta), 21W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DIRECTFET S1
Kifurushi / Kesi :
DirectFET™ Isometric S1
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