ISSI, Integrated Silicon Solution Inc - IS43DR16160B-25DBLI

KEY Part #: K938599

IS43DR16160B-25DBLI Bei (USD) [21159pcs Hisa]

  • 1 pcs$2.77236
  • 209 pcs$2.75857

Nambari ya Sehemu:
IS43DR16160B-25DBLI
Mzalishaji:
ISSI, Integrated Silicon Solution Inc
Maelezo ya kina:
IC DRAM 256M PARALLEL 84TWBGA. DRAM 256Mb, 1.8V, 400MHz 16Mx16 DDR2 SDRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Saa / Saa - Maombi Maalum, Maingiliano - Buffers za Signal, Wanaorudia, Spide, Mantiki - Vipimo, Iliyoingizwa - Microprocessors, Saa / Majira ya saa - Bafa ya Clock, Madereva, Mantiki - Kazi za Basi la Universal, PMIC - Madereva wa Lango and PMIC - PFC (Marekebisho ya Nguvu ya Nguvu) ...
Faida ya Ushindani:
We specialize in ISSI, Integrated Silicon Solution Inc IS43DR16160B-25DBLI electronic components. IS43DR16160B-25DBLI can be shipped within 24 hours after order. If you have any demands for IS43DR16160B-25DBLI, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS43DR16160B-25DBLI Sifa za Bidhaa

Nambari ya Sehemu : IS43DR16160B-25DBLI
Mzalishaji : ISSI, Integrated Silicon Solution Inc
Maelezo : IC DRAM 256M PARALLEL 84TWBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR2
Saizi ya kumbukumbu : 256Mb (16M x 16)
Usafirishaji wa Saa : 400MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 400ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.9V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 84-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 84-TWBGA (8x12.5)

Habari mpya kabisa

Unaweza pia Kuvutiwa Na
  • AT28HC64BF-12SU

    Microchip Technology

    IC EEPROM 64K PARALLEL 28SOIC. EEPROM 1M 5V SDP - 120NS IND TEMP

  • AT28HC64B-90SU

    Microchip Technology

    IC EEPROM 64K PARALLEL 28SOIC. EEPROM 1M 5V SDP - 90NS IND TEMP

  • AT28HC64B-70SU

    Microchip Technology

    IC EEPROM 64K PARALLEL 28SOIC. EEPROM PRLLEL EEPROM 64K 8K 70NS SOIC IND TMP GR

  • MB85R256FPNF-G-JNERE2

    Fujitsu Electronics America, Inc.

    IC FRAM 256K PARALLEL 28SOP.

  • 7164S25TPG

    IDT, Integrated Device Technology Inc

    IC SRAM 64K PARALLEL 28DIP. SRAM 64K(8KX8) BICMOS STAT RAM

  • W9825G2JB-75 TR

    Winbond Electronics

    IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M SDR SDRAM x32, 133MHz, T&R