AS4C32M16D1-5BCN Bei (USD) [30792pcs Hisa]
- 1 pcs$1.49559
- 240 pcs$1.48815
- Nambari ya Sehemu:
- AS4C32M16D1-5BCN
- Mzalishaji:
- Alliance Memory, Inc.
- Maelezo ya kina:
- IC DRAM 512M PARALLEL 60BGA. DRAM 512M 2.5V 200Mhz 32M x 16 DDR1
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maelewano - Utaratibu wa Dijiti wa moja kwa moja (, PMIC - Madereva wa Laser, Iliyoingizwa - FPGAs (Ardhi inayopangwa kwa Mlango, Linear - Amplifiers - Chombo, OP Amps, Buffer Amps, PMIC - Madereva wa Magari, Watawala, PMIC - Mabadiliko ya Usambazaji wa Nguvu, Madereva, Linear - Usindikaji wa Video and Maingiliano - Swichi za Analog, Multiplexers, Demu ...
- Faida ya Ushindani:
- We specialize in Alliance Memory, Inc. AS4C32M16D1-5BCN electronic components. AS4C32M16D1-5BCN can be shipped within 24 hours after order. If you have any demands for AS4C32M16D1-5BCN, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AS4C32M16D1-5BCN Sifa za Bidhaa
Nambari ya Sehemu :
AS4C32M16D1-5BCN
Mzalishaji :
Alliance Memory, Inc.
Maelezo :
IC DRAM 512M PARALLEL 60BGA
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya kumbukumbu :
Volatile
Fomati ya kumbukumbu :
DRAM
Teknolojia :
SDRAM - DDR
Saizi ya kumbukumbu :
512Mb (32M x 16)
Usafirishaji wa Saa :
200MHz
Andika Wakati wa Msaada - Neno, Ukurasa :
15ns
Wakati wa Upataji :
700ps
Maingiliano ya kumbukumbu :
Parallel
Voltage - Ugavi :
2.3V ~ 2.7V
Joto la Kufanya kazi :
0°C ~ 70°C (TA)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
60-TFBGA
Kifurushi cha Kifaa cha Mtoaji :
60-BGA
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
W25M512JVEIQ TR
Winbond Electronics
IC FLASH 512M SPI 104MHZ 8WSON. Multichip Packages spiFlash, 512M-bit, 4Kb Uniform Sector
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