Nambari ya Sehemu :
HEF4011UBT,652
Mzalishaji :
NXP USA Inc.
Maelezo :
IC GATE NAND 4CH 2-INP 14SO
Hali ya Sehemu :
Obsolete
Aina ya mantiki :
NAND Gate
Voltage - Ugavi :
3V ~ 15V
Sasa - Quiescent (Max) :
4µA
Ya Sasa - Matokeo ya Juu, Chini :
3mA, 3mA
Kiwango cha mantiki - Chini :
1V ~ 2.5V
Kiwango cha mantiki - Juu :
4V ~ 12.5V
Ucheleweshaji wa Propagation @ V, Max CL :
40ns @ 15V, 50pF
Joto la Kufanya kazi :
-40°C ~ 85°C
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
14-SO
Kifurushi / Kesi :
14-SOIC (0.154", 3.90mm Width)