Vishay Semiconductor Diodes Division - FESB16JT-E3/45

KEY Part #: K6443484

FESB16JT-E3/45 Bei (USD) [51104pcs Hisa]

  • 1 pcs$0.76512
  • 1,000 pcs$0.34684

Nambari ya Sehemu:
FESB16JT-E3/45
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 600V 16A TO263AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - TRIAC, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Arrays and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division FESB16JT-E3/45 electronic components. FESB16JT-E3/45 can be shipped within 24 hours after order. If you have any demands for FESB16JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB16JT-E3/45 Sifa za Bidhaa

Nambari ya Sehemu : FESB16JT-E3/45
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 600V 16A TO263AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Sasa - Wastani Aliyerekebishwa (Io) : 16A
Voltage - Mbele (Vf) (Max) @ Kama : 1.5V @ 16A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 50ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 600V
Uwezo @ Vr, F : 145pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : TO-263AB
Joto la Kufanya kazi - Junction : -65°C ~ 150°C

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