Vishay Semiconductor Diodes Division - ES07B-GS18

KEY Part #: K6454600

ES07B-GS18 Bei (USD) [921392pcs Hisa]

  • 1 pcs$0.04236
  • 10,000 pcs$0.04215
  • 30,000 pcs$0.03876

Nambari ya Sehemu:
ES07B-GS18
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 100V 1.2A DO219AB. Rectifiers 100 Volt 0.7A 25ns 30 Amp IFSM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - Kusudi Maalum, Thyristors - SCRs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Arrays, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - RF and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division ES07B-GS18 electronic components. ES07B-GS18 can be shipped within 24 hours after order. If you have any demands for ES07B-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES07B-GS18 Sifa za Bidhaa

Nambari ya Sehemu : ES07B-GS18
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 100V 1.2A DO219AB
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 1.2A
Voltage - Mbele (Vf) (Max) @ Kama : 980mV @ 1A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 25ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 100V
Uwezo @ Vr, F : 4pF @ 4V, 50MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-219AB
Kifurushi cha Kifaa cha Mtoaji : DO-219AB (SMF)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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