IPB180N04S4L01ATMA1 Bei (USD) [68107pcs Hisa]
- 1 pcs$0.57411
- 1,000 pcs$0.52669
- Nambari ya Sehemu:
- IPB180N04S4L01ATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH TO263-7.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - FET, MOSFETs - Arrays, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Moja and Transistors - Kusudi Maalum ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPB180N04S4L01ATMA1 electronic components. IPB180N04S4L01ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB180N04S4L01ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB180N04S4L01ATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPB180N04S4L01ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH TO263-7
Mfululizo :
Automotive, AEC-Q101, OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
180A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.2 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 140µA
Malango ya Lango (Qg) (Max) @ Vgs :
245nC @ 10V
Vgs (Max) :
+20V, -16V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
19100pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
188W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO263-7-3
Kifurushi / Kesi :
TO-263-7, D²Pak (6 Leads + Tab)
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