IDT, Integrated Device Technology Inc - 71V416L12BEG

KEY Part #: K938219

71V416L12BEG Bei (USD) [19607pcs Hisa]

  • 1 pcs$2.34873
  • 250 pcs$2.33705

Nambari ya Sehemu:
71V416L12BEG
Mzalishaji:
IDT, Integrated Device Technology Inc
Maelezo ya kina:
IC SRAM 4M PARALLEL 48CABGA. SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Maingiliano - Telecom, Upataji wa data - Kidhibiti cha Skrini ya Kugusa, Mantiki - Msajili wa Shift, Iliyoingizwa - Microcontrollers, Maingiliano - Swichi za Analog, Multiplexers, Demu, Maingiliano - Moduli, PMIC - Usajili wa Voltage - Mdhibiti wa Udhibiti w and Mantiki - Kumbukumbu za FIFO ...
Faida ya Ushindani:
We specialize in IDT, Integrated Device Technology Inc 71V416L12BEG electronic components. 71V416L12BEG can be shipped within 24 hours after order. If you have any demands for 71V416L12BEG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

71V416L12BEG Sifa za Bidhaa

Nambari ya Sehemu : 71V416L12BEG
Mzalishaji : IDT, Integrated Device Technology Inc
Maelezo : IC SRAM 4M PARALLEL 48CABGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : SRAM
Teknolojia : SRAM - Asynchronous
Saizi ya kumbukumbu : 4Mb (256K x 16)
Usafirishaji wa Saa : -
Andika Wakati wa Msaada - Neno, Ukurasa : 12ns
Wakati wa Upataji : 12ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 3V ~ 3.6V
Joto la Kufanya kazi : 0°C ~ 70°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 48-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 48-CABGA (9x9)
Unaweza pia Kuvutiwa Na
  • MR25H10CDCR

    Everspin Technologies Inc.

    IC RAM 1M SPI 40MHZ 8DFN. NVRAM 1Mb 3.3V 128Kx8 Serial MRAM

  • AT27C4096-90PU

    Microchip Technology

    IC EPROM 4M PARALLEL 40DIP. EPROM 4Mb (256Kx16) OTP 5V 90ns

  • 71V3576S150PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP.

  • 71V3577S75PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 4M 3.3V I/O PBSRAM SLOW X

  • W94AD2KBJX5I

    Winbond Electronics

    IC DRAM 1G PARALLEL 90VFBGA. DRAM 1G mDDR, x32, 200MHz, Ind temp

  • W979H2KBVX2I

    Winbond Electronics

    IC DRAM 512M PARALLEL 134VFBGA. DRAM 512Mb LPDDR2, x32, 400MHz, -40 85C